Classical chemical cleaning of semiconductors can introduce carbon contamination on both the surface and sub-surface layers. This phenomenon has been studied by Wan Tat Wat et al. in their paper (https://ieeexplore.ieee.org/document/10121102).

Carbon contamination presents significant challenges. It can cause electrical drift, leading to deviations in device functionality. It complicates oxide growth processes, reduces dielectric breakdown strength, and can induce spurious doping in silicon, ultimately degrading overall device performance.

These issues are not limited to the surface or interface of silicon and oxide layers; defects below the silicon surface also impact performance. Additionally, dry etching processes can introduce crystal structure defects and leave contaminants on the silicon surface and sub-surfaces.

Even small amounts of contaminants at the silicon surface or sub-surface can degrade semiconductor performance and reduce line and chip yields. Carbon-based contaminants are particularly challenging because classical cleaning methods are often ineffective at removing them.

From Classical to Novel Solutions

While classical cleaning solutions have historically removed the majority of contaminants, impurities, and oxide layers, they do not address atomic-level cleanliness or the semiconductor crystal structure. In some cases, they may even introduce atomic-level contamination into the surface and sub-surfaces.

SisuSemi’s novel solution addresses these challenges directly. Our technology ensures atomic-level cleanliness at both the surface and sub-surface while restoring the crystal structure. With this approach, you can remove organic impurities and other unwanted contaminants such as oxygen and hydrogen, while also creating a stable passivation layer that protects the wafer when exposed to the environment.

Learn more about our solutions and reach out to discover how SisuSemi can boost the performance, reliability, and yield of your semiconductor devices.