Atomic-Level Impurities: The Hidden Threat Undermining RF Semiconductor Performance—And How SisuSemi’s Technology is Changing the Game - Atomic-Level Semiconductor Cleaning Solution

In the age of 5G, IoT, satellite communication, radar and next-gen wireless infrastructure, radio frequency (RF) semiconductors are at the heart of our connected world. Yet, as devices shrink and frequencies climb, the tolerances for error in RF components have all but vanished. Behind the scenes, a silent saboteur lurks: atomic-level defects and contamination.

Atomic-level defects—like vacancies, interstitials and trace impurities—may be invisible, but their effects on RF semiconductor performance are far from negligible. In fact, these microscopic imperfections can critically damage the signal integrity, noise performance, power efficiency and yield of RF devices.

Let’s break this down:

1. Signal performance and quality

In RF power amplifiers and low-noise amplifiers (LNAs), atomic-scale contamination in gate oxides or interfaces can cause increased flicker noise and phase noise, degraded linearity and gain flatness, and unpredictable impedance matching. This results in lower signal fidelity, making systems less reliable for high-frequency applications like mmWave 5G and advanced radar.

2. Power efficiency and thermal behavior

Defects at the substrate or epi-layer level lead to higher leakage currents and localized heating, causing reduced power-added efficiency (PAE), thermal hotspots, risking performance throttling or early failure, and higher power dissipation, undermining energy-sensitive applications like mobile and IoT.

3. Yield and cost

Atomic-level particles and molecular residues introduced during etching, deposition or cleaning can kill devices early in the process. This is especially painful in high-frequency RFICs or GaN/SiC power components, where even a single process excursion can destroy margins.

Application-specific consequences of defects in RF devices

Different RF applications suffer in distinct ways due to these defects:

Application	Impact of Defects & Contamination
5G/mmWave RF front-ends	Phase noise degradation leads to reduced bandwidth, poor beam steering accuracy
Automotive radar	Atomic contamination causes erratic performance in harsh environments
IoT/wearables	Increased leakage and variability reduce battery life and communication range
Satellite communications	Yield loss in high-frequency devices drives up cost and delays production
Aerospace/defense	Contaminants trigger latent failures, compromising mission-critical reliability

Traditional atomic-level cleaning methods: A mixed bag

To combat contamination, the semiconductor industry has historically used several atomic-level cleaning methods. Each has its merits—and its limits.

Wet chemical cleaning such as RCA clean, piranha etch, and HF-last are effective on organic residues and particulates and are relatively low cost. On the other hand, there is risk of recontamination and surface oxidation, and poor compatibility with advanced materials.

Plasma cleaning methods like O₂, Ar, or H₂ plasma treatments are good for polymer and resist residues and inline compatible. The downside is that sensitive materials can be damaged, generating surface defects.

UV/ozone cleaning is environmentally cleaner and gentle. Disadvantages include ineffectiveness on metal contamination and limited applicability to surface-level cleaning.

Thermal Annealing can activate out-diffusion of certain impurities. However, high thermal budgets cause dopant diffusion and material stress—unsuitable for temperature-sensitive processes.

SisuSemi: Low-Temperature, Ultra-High Vacuum cleaning for the atomic era

SisuSemi’s breakthrough cleaning technology addresses the industry’s most critical pain points with a low-temperature, ultra-high vacuum (UHV) approach designed for next-gen semiconductor nodes and advanced RF devices.

The method removes atomic-level residues that traditional methods miss. It is low-temperature, ideal for advanced RF materials and temperature-sensitive stacks in 3DICs and heterogeneous integration. SisuSemi is non-destructive and gentle: it avoids plasma damage and high-thermal stress, preserving delicate nanostructures and passivation layers. The ultra-high vacuum environment prevents recontamination, enabling defect-free surface preparation for epitaxy, ALD, or high-k deposition. The technology restores the crystalline structure to the surface atoms and forms a very thin crystalline SiO₂ layer to protect the silicon surface and enhance further processing. Furthermore, the SisuSemi solution can complement traditional cleaning methods to secure atomic-level cleanliness or overcome their challenges.

Strategic benefits for semiconductor companies

Adopting SisuSemi’s atomic-cleaning technology can unlock game-changing advantages:

Benefit	Impact
Higher RF yield	Cleaner wafers result in fewer process-related failures
Improved power efficiency	Lower leakage and better thermal behavior translate to better PAE
Superior RF performance	Lower phase noise, higher linearity, and more consistent S-parameters
Faster time to yield	Cleaner starts reduce process tuning cycles and defect analysis bottlenecks
Competitive differentiation	Stand out in high-growth markets like 5G, IoT, and defense with superior device quality

Conclusion

In an era where every atom counts, traditional cleaning techniques no longer meet the demands of RF semiconductor manufacturing. As device geometries shrink and performance expectations rise, the industry needs a new class of atomic-level surface preparation.

SisuSemi’s UHV, low-temperature cleaning technology solves what metrology can only diagnose—ensuring that the next generation of RF semiconductors meets its full potential in performance, power, and yield.

For companies looking to lead in RF innovation, SisuSemi offers a unique path to differentiation, cost-efficiency, and long-term competitiveness in an increasingly crowded marketplace.