In the article (https://www.researchgate.net/publication/301672352), D. H. Im et al. states:

“Today’s sub 20 nm scale integration technology is strongly in need of an atomic scale controlling arising from the miniaturization of silicon devices.”

At SisuSemi, we share this view. As semiconductor nodes shrink, focus is shifting toward atomic-level control and cleanliness. Importantly, cleaning alone is not sufficient: the cleaned surface must also be passivated to maintain its pristine state. Without protection, native oxidation can introduce significant challenges, as it forms a non-crystalline oxide layer.

Traditional Methods for Surface Cleaning

The article discusses classical wet and dry cleaning methods. Here’s a summary:

Wet Cleaning

  • Advantages: Effective at removing SiO₂.
  • Limitations: Low selectivity between SiO₂ and SiN, or SiO₂ and Poly Si. Native oxidation is a significant challenge.
  • Other studies highlight contamination caused by wet etching as an issue (source).

Dry Cleaning (Etching)

  • Advantages: Effective at removing oxides from the surface.
  • Challenges: Can leave fluorine residues that complicate subsequent process steps. If not integrated in a vacuum or protective environment, native oxidation can return, hindering smooth integration.

Moreover, classical methods do not address the atomic-level structure of silicon. Dry etching can create defects at the sub-surface level, resulting in an un-ordered surface that hampers smooth growth in subsequent processes. This highlights the need to challenge conventional approaches and explore novel solutions.

Importance of Atomic-Level Cleanliness

Atomic-level cleanliness is critical for semiconductor performance and reliability. Even minor contaminants can affect electrical properties, causing increased leakage currents, reduced device lifespan, and compromised conductivity. Traditional cleaning methods cannot ensure atomic-scale smoothness and ordering. Innovative approaches are therefore essential for optimizing semiconductor manufacturing.

At SisuSemi, our advanced cleaning technology not only removes contaminants but also reorders the crystal structure of silicon surfaces. This results in a clean, atomically smooth, and passivated surface, ready for the next process step, significantly improving electrical characteristics and overall device performance.

Novel Solutions by SisuSemi

Our process removes native oxides, hydrogen, carbon, and other residues from silicon and other semiconductor surfaces. Beyond cleaning, we reorder the crystal structure—a capability that conventional technologies cannot achieve.

Our solution can be seamlessly integrated with subsequent process steps or include a crystalline SiO₂ layer on top of the cleaned surface. This approach has demonstrated measurable improvements in electrical performance, including reduced leakage current and lower defect density, as documented in our case studies.

Reach out to explore how SisuSemi can help improve semiconductor surface quality and device performance.